题目:Manganese Doped Tin Oxide for Stable and Efficient Quantum Dot Light–Emitting Diodes

作者:Wenchen Ma, a Zhenwei Ren, a,* Hengfei Shi,a Xueqing Xia,b Xinwen Wang,a Huifei Ji,a Hua Chen,a Chengzhao Luo,a Chinhua Wang,a Song Chen,b,* Yu Chen a,c,*

单位:

a School of Optoelectronic Science and Engineering & Collaborative Innovation Center of  Suzhou Nano Science and Technology,Soochow University,Suzhou 215006, China

b College of Chemistry, Chemical Engineering and Materials Science, Soochow University,Suzhou 215123,China

c National University of Singapore Suzhou Research Institute,Dushu Lake Science and Education Innovation District,Suzhou 215123,China


摘要:As an alternative electron transport material to the chemically unstable ZnO nanoparticles (NPs), SnO2 NPs exhibit a great potential to construct high-performance quantum dot light-emitting diodes (QLEDs). However, only moderate device performance has been obtained for SnO2-based QLEDs due to the low electron mobility, unfavorable energy band, and massive defects of SnO2 NPs. Herein, a strategy of transition metal doping is reported to achieve high-quality manganese-doped SnO2 (Mn-SnO2) NPs to address the above problems. Specifically, the large bond energy of Mn─O bonds reduces the oxygen vacancy defects, prompting an effective suppression of the interfacial exciton quenching for massive radiative recombination. Moreover, the favorable energy band and high electron mobility for Mn-SnO2 promote efficient electron injection and transportation. The good optoelectronic properties for Mn-SnO2 NPs contribute to a great enhancement in device efficiency from 8.2 to 11.4% and a remarkable improvement in lifetime (T95from 565.3 to 1009.2h at 1000 cd?2, among the best performing ZnO-free QLEDs. Notably, the Mn-SnO2 based QLEDs show a very superior shelf stability to the QLEDs based on SnO2 and ZnO analogs. Consequently, this work reports an effective approach to achieve high-quality SnO2 NPs for efficient and stable QLEDs.

影响因子:11

链接:https://onlinelibrary.wiley.com/doi/epdf/10.1002/lpor.202400005